Through-silicon via (TSV) is a type of via or vertical interconnect access which passes from end to end of a silicon wafer. A VIA is an electrical connection amid the layers in an electronic circuit that passes through the surface of one or more end-to-end layers. These are a high performance connection technique which are used as alternatives to flip chips and wire-bond to create 3D integrated circuits and 3D packages, paralleled to alternatives (package-on-package) as the compactness of the vias is considerably higher. Moreover, the lengths of the connections are shorter. Technological development in IC packaging let the end product to be reduced in size such as tablets and smart phones. Silicon vias is a cutting-edge packaging technique where electronic goods occupies low space and offers superior connectivity. TSVs are used to unite several ICs organized in a single package.
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The integration technology in semiconductors has been mostly present in two-dimensional applications in the recent past. These extensive applications have been employed not only in the area of the electronics but they are present in lot of associated businesses such as bioelectronics, military systems, submarine systems, computer systems, electronics analysis, medical systems, satellite systems optoelectronics, among others. From the consumer’s point of view nearly all industrial products integrate semiconductor devices. One of the most significant reasons for this speedy growth is the better scalability of MOS or metal–oxide– semiconductor devices.
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Based on type of platforms, the global through silicon via (TSV) packaging market can be bifurcated into 2.5D TSV platform and 3D TSV platform. 2.5D is primarily GPU (graphics processing unit) and CPU (central processing unit) driven whereas 3D is memory and application process driven. 2.5D TSV platform held a significant market share in the global through silicon via (TSV) packaging market. This is due to the better functionalities and product opportunities available for 2,5D platforms such as it improves wafer yield, reduces wafer start cost, reduces complexity of manufacturing, improves power and performance. These factors will fuel the 2.5D TSV platform market thereby augmenting the overall growth of the global through silicon via (TSV) packaging market.
On the basis of application the through silicon via (TSV) packaging market can be classified into memory arrays, image sensors, graphics chips, MPUs (microprocessor units), DRAM (dynamic random access memory), integrated circuits, and others. The complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) was amongst the chief applications to implement TSV(s) in high volume engineering. In the initial phase of CIS applications, through silicon via were formed on the reverse of the wafer to form connects, eradicate wire links, thereby reducing form factor and higher-density links. These factors will drive the image sensors application segment in the overall through silicon via packaging market.
By geography, the global through silicon via (TSV) packaging market can be segmented into North America, Europe, Asia Pacific, Latin America, and the Middle East and Africa. Asia Pacific held the leading share of the market followed by North America. Countries such as China, Korea and Japan utilizes silicon via (TSV) packaging on a large scale. These regions are considered as the hub of electronics parts manufacturing. Advancement in technology along with low cost manufacturing are the main reasons for growth in this region. North America trailed Asia Pacific in terms of market share in the through silicon via (TSV) packaging market. Presence of large number of corporations along with kinship of consumers to adopt newer technology will drive the market in this region.
Some of the major players operating in the global exposure system market are Applied Materials, International Business Machines Corporation, Amkor Micralyne, Inc., Tezzaron Semiconductors, STATS ChipPAC Ltd, Micralyne, Inc., and Xilinx.
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